leshan radio company, ltd. l2n7002kn3t5g device marking shipping ordering information 10000 tape & reel n?channel sot883 ? small signal mosfet 380 mamps, 60 volts ? gate source drain 3 2 1 we declare that the material of product are halogen free and compliance with rohs requirements. features ? esd protected ? low r ds(on) ? surface mount package ? this is a pb ? free device applications ? low side load switch ? level shift circuits ? dc ? dc converter ? portable applications i.e. dsc, pda, cell phone, etc. maximum ratings (t j = 25 c unless otherwise stated) rating symbol value unit drain ? to ? source voltage v dss 60 v gate ? to ? source voltage v gs 20 v drain current (note 1) steady state t a = 25 c t a = 85 c t < 5 s t a = 25 c t a = 85 c i d 320 230 380 270 ma power dissipation (note 1) steady state p d 250 mw pulsed drain current (t p = 10 s) i dm 1.5 a operating junction and storage temperature range t j , t stg ? 55 to +150 c source current (body diode) i s 300 ma lead temperature for soldering purposes (1/8 from case for 10 s) t l 260 c gate ? source esd rating (hbm, method 3015) esd 2000 v stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. thermal characteristics characteristic symbol max unit junction ? to ? ambient ? steady state (note 1) r ja 500 c/w 1. surface ? mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces) 60 v 1.8 @ 10 v r ds(on) max 380 ma i d max (note 1) v (br)dss 2.5 @ 5.0 v l2n7002kn3t5g rk rev .a 1/5 1 2 3 sot883
leshan radio company, ltd. l2n7002kn3t5g electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol test condition min typ max units off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = 250 a 60 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 71 mv/ c zero gate voltage drain current i dss v gs = 0 v, v ds = 60 v t j = 25 c 1 a t j = 125 c 500 v gs = 0 v, v ds = 50 v t j = 25 c 100 na gate ? to ? source leakage current i gss v ds = 0 v, v gs = 20 v 10 a on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 250 a 1.0 2.5 v negative threshold temperature coefficient v gs(th) /t j 4.0 mv/ c drain ? to ? source on resistance r ds(on) v gs = 10 v, i d = 500 ma 1.8 v gs = 5.0 v, i d = 50 ma 2.5 forward transconductance g fs v ds = 5 v, i d = 200 ma 80 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1 mhz, v ds = 25 v 32.8 pf output capacitance c oss 5.4 reverse transfer capacitance c rss 2.9 total gate charge q g(tot) v gs = 4.5 v, v ds = 10 v; i d = 200 ma 0.7 nc threshold gate charge q g(th) 0.1 gate ? to ? source charge q gs 0.3 gate ? to ? drain charge q gd 0.1 switching characteristics, v gs = v (note 3) turn ? on delay time t d(on) v gs = 10 v, v dd = 10 v, i d = 500 ma 9.9 ns rise time t r 5.0 turn ? off delay time t d(off) 39.4 fall time t f 17.9 drain ? source diode characteristics forward diode voltage v sd v gs = 0 v, i s = 115 ma t j = 25 c 1.4 v t j = 85 c 0.7 2. pulse test: pulse width 300 s, duty cycle 2% 3. switching characteristics are independent of operating junction temperatures rev .a 2/5
leshan radio company, ltd. typical electrical characteristics l2n7002kn3t5g 5.0 v figure 1. on ? region characteristics figure 2. transfer characteristics v ds , drain ? to ? source voltage (v) v gs , gate ? to ? source voltage (v) 6 4 2 0 0 0.4 0.8 1.2 1.6 6 4 2 0 0 0.4 0.8 1.2 figure 3. on ? resistance vs. drain current and temperature figure 4. on ? resistance vs. drain current and temperature i d , drain current (a) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.4 0.8 1.2 1.6 2.0 3.2 figure 5. on ? resistance vs. gate ? to ? source voltage figure 6. on ? resistance variation with temperature v gs , gate ? to ? source voltage (v) t j , junction temperature ( c) 10 8 6 4 2 0.4 0.8 1.6 2.4 125 100 75 50 25 0 ? 25 ? 50 0.6 1.0 1.4 1.8 2.2 i d , drain current (a) i d , drain current (a) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance ( ) r ds(on) , drain ? to ? source resistance (normalized) v gs = 10 v 7.0 v 8.0 v 9.0 v 4.5 v 4.0 v 6.0 v 3.5 v 3.0 v 2.5 v t j = ? 55 c t j = 125 c t j = 25 c t j = ? 55 c t j = 125 c t j = 25 c t j = 85 c v gs = 4.5 v i d , drain current (a) 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.8 1.6 2.4 3.2 r ds(on) , drain ? to ? source resistance ( ) t j = ? 55 c t j = 125 c t j = 25 c t j = 85 c v gs = 10 v i d = 500 ma i d = 200 ma 150 i d = 0.2 a v gs = 4.5 v v gs = 10 v 1.2 2.0 2.4 2.8 0.4 1.2 2.0 2.8 rev .a 3/5
leshan radio company, ltd. typical electrical characteristics l2n7002kn3t5g figure 7. capacitance variation figure 8. gate ? to ? source and drain ? to ? source voltage vs. total charge qg, total gate charge (nc) 0.8 0.6 0.4 0.2 0 0 1 2 3 4 5 figure 9. diode forward voltage vs. current v sd , source ? to ? drain voltage (v) 1.2 1.0 0.8 0.6 0.4 0.01 1 10 v gs , gate ? to ? source voltage (v) i s , source current (a) t j = 25 c i d = 0.2 a 20 16 12 8 4 0 0 10 20 30 c, capacitance (pf) c iss c oss c rss t j = 25 c v gs = 0 v gate ? to ? source or drain ? to ? source voltage (v) t j = 25 c t j = 85 c v gs = 0 v 0.1 rev .a 4/5
leshan radio company, ltd. l2n7002kn3t5g rev .a 5/5 sot883 unit:mm dimension outline:
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